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SI3590DV-T1-GE3 Folha de dados(PDF) 1 Page - Vishay Siliconix |
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SI3590DV-T1-GE3 Folha de dados(HTML) 1 Page - Vishay Siliconix |
1 / 13 page Vishay Siliconix Si3590DV Document Number: 72032 S09-1927-Rev. C, 28-Sep-09 www.vishay.com 1 N- and P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition •TrenchFET® Power MOSFET • Ultra Low RDS(on) N- and P-Channel for High Efficiency • Optimized for High-Side/Low-Side • Minimized Conduction Losses • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices Including PDAs, Cellular Phones and Pagers Notes: a. Surface Mounted on 1" x 1" FR4 board. PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) N-Channel 30 0.077 at VGS = 4.5 V 3 0.120 at VGS = 2.5 V 2 P-Channel - 30 0.170 at VGS = - 4.5 V - 2 0.300 at VGS = - 2.5 V - 1.2 TSOP-6 Top View 2.85 mm 3 mm D2 G2 S1 S2 D1 G1 Ordering Information: Si3590DV-T1-E3 (Lead (Pb)-free) Si3590DV-T1-GE3 (Lead (Pb)-free and Halogen-free) 6 4 1 2 3 5 D1 G1 S1 N-Channel MOSFET S2 G2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit 10 s Steady State 10 s Steady State Drain-Source Voltage VDS 30 - 30 V Gate-Source Voltage VGS ± 12 ± 12 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 3 2.5 - 2 - 1.7 A TA = 70 °C 2.3 2.0 - 1.6 - 1.3 Pulsed Drain Current IDM 8- 8 Continuous Source Current (Diode Conduction)a IS 1.05 0.75 - 1.05 - 0.75 Maximum Power Dissipationa TA = 25 °C PD 1.15 0.83 1.15 0.83 W TA = 70 °C 0.70 0.53 0.70 0.53 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambienta t ≤ 10 s RthJA 93 110 93 110 °C/W Steady State 130 150 130 150 Maximum Junction-to-Foot (Drain) Steady State RthJF 75 90 75 90 |
Nº de peça semelhante - SI3590DV-T1-GE3 |
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Descrição semelhante - SI3590DV-T1-GE3 |
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