SI3850ADV datasheet(1/13 Pages) VISHAY

Nome de Peças	SI3850ADV

Descrição Electrónicos	Complementary MOSFET Half-Bridge (N- and P-Channel)

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Vishay Siliconix

Si3850ADV

Document Number: 73789

S09-2110-Rev. B, 12-Oct-09

www.vishay.com

1

Complementary MOSFET Half-Bridge (N- and P-Channel)

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

•

Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

N-Channel

20

0.300 at VGS = 4.5 V

1.4

0.410 at VGS = 3.0 V

1.2

P-Channel

- 20

0.640 at VGS = - 4.5 V

- 0.96

0.980 at VGS = - 3.0 V

- 0.78

TSOP-6

Top View

6

4

1

2

3

5

G1

G2

D

S1

S2

D

Ordering Information: Si3850ADV-T1-E3 (Lead (Pb)-free)

Si3850ADV-T1-GE3 (Lead (Pb)-free and Halogen-free)

S2

G2

G1

S1

D

Note:

Maximum under Steady State condition is 150 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

20

- 20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TA = 25 °C

ID

1.4

- 0.96

A

TA = 70 °C

1.1

- 0.77

Pulsed Drain Current

IDM

3.5

- 2.0

Continuous Source Current (Diode Conduction)a

IS

0.9

- 0.9

Maximum Power Dissipation

(Surface Mounted on FR4 Board)

TA = 25 °C

PD

1.08

W

TA = 70 °C

0.70

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N- or P-Channel

Unit

Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, ±

≤ 10 s)

RthJA

115

°C/W

Nº de peça semelhante - SI3850ADV

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI3850ADV	65Kb / 2P	Specification Comparison Revision: 31-Oct-06
	SI3850ADV	128Kb / 9P	Complementary MOSFET Half-Bridge (N- and P-Channel) Rev. A, 27-Mar-06
	SI3850ADV	120Kb / 9P	Complementary MOSFET Half-Bridge (N- and P-Channel) 01-Jan-2022
	SI3850ADV-T1-E3	128Kb / 9P	Complementary MOSFET Half-Bridge (N- and P-Channel) Rev. A, 27-Mar-06
	SI3850ADV	128Kb / 9P	Complementary MOSFET Half-Bridge (N- and P-Channel) Rev. A, 27-Mar-06

More results

Descrição semelhante - SI3850ADV

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Guangdong Kexin Industr...	KI4500BDY	57Kb / 2P	Complementary MOSFET Half-Bridge (N- and P-Channel)
Guangdong Kexin Industr...	KI4501DY	58Kb / 2P	Complementary MOSFET Half-Bridge (N- and P-Channel)
Vishay Siliconix	SI4501ADY	65Kb / 2P	Complementary MOSFET Half-Bridge (N- and P-Channel) 14-Jun-04
	SI3850ADV	128Kb / 9P	Complementary MOSFET Half-Bridge (N- and P-Channel) Rev. A, 27-Mar-06
	SI4500BDY	124Kb / 9P	Complementary MOSFET Half-Bridge (N- and P-Channel) Rev. C, 12-Jun-06
	SI4500DY	106Kb / 7P	Complementary MOSFET Half-Bridge (N- and P-Channel) Rev. A, 26-Apr-99
	SI3850ADV	120Kb / 9P	Complementary MOSFET Half-Bridge (N- and P-Channel) 01-Jan-2022
	SI4500BDY	278Kb / 12P	Complementary MOSFET Half-Bridge (N- and P-Channel) Rev. D, 27-Apr-09
	SI4501DY	58Kb / 7P	Complementary MOSFET Half-Bridge (N- and P-Channel) Rev. B, 19-Jul-99
Guangdong Kexin Industr...	KI4501ADY	57Kb / 2P	Complementary (N- and P-Channel) MOSFET Half-Bridge

More results

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