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SI4004DY-T1-GE3 Folha de dados(PDF) 2 Page - Vishay Siliconix |
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SI4004DY-T1-GE3 Folha de dados(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number: 70338 S10-1288-Rev. A, 31-May-10 Vishay Siliconix Si4004DY New Product Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 22 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 5.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.2 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 11 A 0.0115 0.0138 Ω VGS = 4.5 V, ID = 9.3 A 0.0160 0.0192 Forward Transconductancea gfs VDS = 10 V, ID = 11 A 25 S Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 1280 pF Output Capacitance Coss 440 Reverse Transfer Capacitance Crss 195 Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 11 A 21.6 33 nC VDS = 10 V, VGS = 4.5 V, ID = 11 A 10.6 16 Gate-Source Charge Qgs 4.2 Gate-Drain Charge Qgd 3.1 Gate Resistance Rg f = 1 MHz 0.7 3.6 7.2 Ω Turn-On Delay Time td(on) VDD = 10 V, RL = 1.1 Ω ID ≅ 8.8 A, VGEN = 4.5 V, Rg = 1 Ω 15 25 ns Rise Time tr 12 20 Turn-Off Delay Time td(off) 17 26 Fall Time tf 918 Turn-On Delay Time td(on) VDD = 10 V, RL = 1.1 Ω ID ≅ 8.8 A, VGEN = 10 V, Rg = 1 Ω 714 Rise Time tr 10 20 Turn-Off Delay Time td(off) 23 35 Fall Time tf 918 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 4.2 A Pulse Diode Forward Currenta ISM 70 Body Diode Voltage VSD IS = 8.8 A 0.84 1.2 V Body Diode Reverse Recovery Time trr IF = 8.8 A, dI/dt = 100 A/µs, TJ = 25 °C 26 39 ns Body Diode Reverse Recovery Charge Qrr 15 23 nC Reverse Recovery Fall Time ta 13 ns Reverse Recovery Rise Time tb 13 |
Nº de peça semelhante - SI4004DY-T1-GE3 |
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Descrição semelhante - SI4004DY-T1-GE3 |
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