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SI4100DY Folha de dados(PDF) 2 Page - Vishay Siliconix

Nome de Peças SI4100DY
Descrição Electrónicos  N-Channel 100-V (D-S) MOSFET
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Vishay Siliconix
SPICE Device Model Si4100DY
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
3
V
On-State Drain Current
a
ID(on)
VDS ≥ 5 V, VGS = 10 V
88
A
VGS = 10 V, ID = 4.4 A
0.051
0.051
Drain-Source On-State Resistance
a
rDS(on)
VGS = 6 V, ID = 3.8 A
0.069
0.069
Forward Transconductance
a
gfs
VDS = 15 V, ID = 4.4 A
12
10
S
Diode Forward Voltage
a
VSD
IS = 3.5 A, VGS = 0 V
0.70
0.80
V
Dynamic
b
Input Capacitance
Ciss
608
600
Output Capacitance
Coss
90
90
Reverse Transfer Capacitance
Crss
VDS = 50 V, VGS = 0 V, f = 1 MHz
43
50
pF
VDS = 50 V, VGS = 10 V, ID = 4.4 A
12.5
13.5
Total Gate Charge
Qg
9
9
Gate-Source Charge
Qgs
3
3
Gate-Drain Charge
Qgd
VDS = 50 V, VGS = 6 V, ID = 4.4 A
4.6
4.6
nC
Notes
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
www.vishay.com
Document Number: 69177
S-71713
Rev. A, 20-Aug-07


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