SI4464DY_05 datasheet(2/4 Pages) VISHAY

Nome de Peças	SI4464DY

Descrição Electrónicos	N-Channel 200-V (D-S) MOSFET

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Vishay Siliconix

SPICE Device Model Si4464DY

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.9

V

On-State Drain Current

a

ID(on)

VDS ≥ 5 V, VGS = 10 V

26

A

VGS = 10 V, ID = 2.2 A

0.192

0.195

Drain-Source On-State Resistance

a

rDS(on)

VGS = 6 V, ID = 2.1 A

0.199

0.210

Ω

Forward Transconductance

a

gfs

VDS = 15 V, ID = 2.2 A

6.1

8

S

Diode Forward Voltage

a

VSD

IS = 2.1 A, VGS = 0 V

0.74

0.8

V

Dynamic

b

Total Gate Charge

Qg

13

12

Gate-Source Charge

Qgs

2.5

Gate-Drain Charge

Qgd

VDS = 100 V, VGS = 10 V, ID = 2.2 A

3.8

nC

Turn-On Delay Time

td(on)

14

10

Rise Time

tr

12

Turn-Off Delay Time

td(off)

8

15

Fall Time

tf

VDD = 100 V, RL = 100 Ω

ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω

10

15

Source-Drain Reverse Recovery Time

trr

IF = 2.1 A, di/dt = 100 A/µs

53

60

ns

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

2

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Document Number: 72172

S-51095

Rev. B, 13-Jun-05

Nº de peça semelhante - SI4464DY_05

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI4464DY	167Kb / 8P	N-Channel 200-V (D-S) MOSFET Rev. C, 27-Apr-09
Vishay Siliconix	SI4464DY	165Kb / 8P	N-Channel 200-V (D-S) MOSFET 01-Jan-2022

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Descrição semelhante - SI4464DY_05

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