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SI4497DY Folha de dados(PDF) 2 Page - Vishay Siliconix |
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SI4497DY Folha de dados(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page  www.vishay.com 2 Document Number: 65748 S10-0639-Rev. A, 22-Mar-10 Vishay Siliconix Si4497DY New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 26 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 5.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS ≥ - 10 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 20 A 0.0027 0.0033 Ω VGS = - 4.5 V, ID = - 15 A 0.0038 0.0046 Forward Transconductancea gfs VDS = - 10 V, ID = - 20 A 75 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 9685 pF Output Capacitance Coss 995 Reverse Transfer Capacitance Crss 995 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 20 A 190 285 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A 90 135 Gate-Source Charge Qgs 27.5 Gate-Drain Charge Qgd 26.5 Gate Resistance Rg f = 1 MHz 0.5 2.3 4.6 Ω Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 19 35 ns Rise Time tr 13 25 Turn-Off DelayTime td(off) 115 200 Fall Time tf 25 50 Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω 100 180 Rise Time tr 75 150 Turn-Off DelayTime td(off) 100 180 Fall Time tf 42 80 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C - 36 A Pulse Diode Forward Current ISM - 70 Body Diode Voltage VSD IS = - 3 A, VGS = 0 V - 0.70 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 31 60 ns Body Diode Reverse Recovery Charge Qrr 23 45 nC Reverse Recovery Fall Time ta 13 ns Reverse Recovery Rise Time tb 18 |
Nº de peça semelhante - SI4497DY |
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Descrição semelhante - SI4497DY |
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