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SI4500BDY Folha de dados(PDF) 2 Page - Vishay Siliconix

Nome de Peças SI4500BDY
Descrição Electrónicos  Complementary MOSFET Half-Bridge (N- and P-Channel)
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
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Document Number: 72281
S09-0705-Rev. D, 27-Apr-09
Vishay Siliconix
Si4500BDY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
N-Ch
0.6
1.5
V
VDS = VGS, ID = - 250 µA
P-Ch
- 0.6
- 1.5
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
N-Ch
± 100
nA
P-Ch
± 100
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
N-Ch
1
µA
VDS = - 20 V, VGS = 0 V
P-Ch
- 1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
N-Ch
5
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
P-Ch
- 5
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 4.5 V
N-Ch
30
A
VDS = - 5 V, VGS = - 4.5 V
P-Ch
- 20
Drain-Source On-State Resistanceb
RDS(on)
VGS = 4.5 V, ID = 9.1 A
N-Ch
0.016
0.020
Ω
VGS = - 4.5 V, ID = - 5.3 A
P-Ch
0.048
0.060
VGS = 2.5 V, ID = 3.3 A
N-Ch
0.024
0.030
VGS = - 2.5 V, ID = - 1 A
P-Ch
0.082
0.100
Forward Transconductanceb
gfs
VDS = 15 V, ID = 9.1 A
N-Ch
29
S
VDS = - 15 V, ID = - 5.3 A
P-Ch
11
Diode Forward Voltageb
VSD
IS = 2.1 A, VGS = 0 V
N-Ch
0.8
1.2
V
IS = - 2.1 A, VGS = 0 V
P-Ch
- 0.8
- 1.2
Dynamica
Total Gate Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 9.1 A
P-Channel
VDS = - 10 V, VGS = - 4.5 V, ID = - 5.3 A
N-Ch
11
17
nC
P-Ch
6.0
9
Gate-Source Charge
Qgs
N-Ch
2.5
P-Ch
1.3
Gate-Drain Charge
Qgd
N-Ch
3.2
P-Ch
1.6
Turn-On Delay Time
td(on)
N-Channel
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
P-Channel
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
N-Ch
35
50
ns
P-Ch
20
30
Rise Time
tr
N-Ch
50
80
P-Ch
35
60
Turn-Off Delay Time
td(off)
N-Ch
31
50
P-Ch
55
85
Fall Time
tf
N-Ch
15
30
P-Ch
35
60
Source-Drain Reverse Recovery Time
trr
IF = 2.1 A, dI/dt = 100 A/µs
N-Ch
30
60
IF = - 2.1 A, dI/dt = 100 A/µs
P-Ch
25
50


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