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SI4500BDY Folha de dados(PDF) 2 Page - Vishay Siliconix |
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SI4500BDY Folha de dados(HTML) 2 Page - Vishay Siliconix |
2 / 12 page www.vishay.com 2 Document Number: 72281 S09-0705-Rev. D, 27-Apr-09 Vishay Siliconix Si4500BDY Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.6 1.5 V VDS = VGS, ID = - 250 µA P-Ch - 0.6 - 1.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V N-Ch ± 100 nA P-Ch ± 100 Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V N-Ch 1 µA VDS = - 20 V, VGS = 0 V P-Ch - 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 5 VDS = - 20 V, VGS = 0 V, TJ = 55 °C P-Ch - 5 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 4.5 V N-Ch 30 A VDS = - 5 V, VGS = - 4.5 V P-Ch - 20 Drain-Source On-State Resistanceb RDS(on) VGS = 4.5 V, ID = 9.1 A N-Ch 0.016 0.020 Ω VGS = - 4.5 V, ID = - 5.3 A P-Ch 0.048 0.060 VGS = 2.5 V, ID = 3.3 A N-Ch 0.024 0.030 VGS = - 2.5 V, ID = - 1 A P-Ch 0.082 0.100 Forward Transconductanceb gfs VDS = 15 V, ID = 9.1 A N-Ch 29 S VDS = - 15 V, ID = - 5.3 A P-Ch 11 Diode Forward Voltageb VSD IS = 2.1 A, VGS = 0 V N-Ch 0.8 1.2 V IS = - 2.1 A, VGS = 0 V P-Ch - 0.8 - 1.2 Dynamica Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 9.1 A P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 5.3 A N-Ch 11 17 nC P-Ch 6.0 9 Gate-Source Charge Qgs N-Ch 2.5 P-Ch 1.3 Gate-Drain Charge Qgd N-Ch 3.2 P-Ch 1.6 Turn-On Delay Time td(on) N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω N-Ch 35 50 ns P-Ch 20 30 Rise Time tr N-Ch 50 80 P-Ch 35 60 Turn-Off Delay Time td(off) N-Ch 31 50 P-Ch 55 85 Fall Time tf N-Ch 15 30 P-Ch 35 60 Source-Drain Reverse Recovery Time trr IF = 2.1 A, dI/dt = 100 A/µs N-Ch 30 60 IF = - 2.1 A, dI/dt = 100 A/µs P-Ch 25 50 |
Nº de peça semelhante - SI4500BDY |
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Descrição semelhante - SI4500BDY |
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