SI4501BDY-T1-GE3 datasheet(10/15 Pages) VISHAY

Nome de Peças	SI4501BDY-T1-GE3

Descrição Electrónicos	Complementary (N- and P-Channel) MOSFET

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Fabricante Electrônico	VISHAY [Vishay Siliconix]

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Document Number: 67441

S11-0245-Rev. A, 14-Feb-11

Vishay Siliconix

Si4501BDY

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

2

4

6

8

10

0

25

50

75

100

125

150

T

C - Case Temperature (°C)

Power Derating, Junction-to-Foot

0.00

0.72

1.44

2.16

2.88

3.60

025

50

75

100

125

150

T

C - Case Temperature (°C)

Power Derating, Junction-to-Ambient

0.0

0.3

0.6

0.9

1.2

1.5

025

50

75

100

125

150

T

A - Ambient Temperature (°C)

Nº de peça semelhante - SI4501BDY-T1-GE3

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI4501BDY-T1-GE3	251Kb / 14P	Complementary (N- and P-Channel) MOSFET 01-Jan-2022

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Descrição semelhante - SI4501BDY-T1-GE3

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SI4501BDY-T1-GE3 Folha de dados(PDF) 10 Page - Vishay Siliconix

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