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SI4622DY-T1-E3 Folha de dados(PDF) 5 Page - Vishay Siliconix |
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SI4622DY-T1-E3 Folha de dados(HTML) 5 Page - Vishay Siliconix |
5 / 15 page Document Number: 68695 S09-0764-Rev. B, 04-May-09 www.vishay.com 5 Vishay Siliconix Si4622DY New Product CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Reverse Current (Schottky) 0.1 1 10 100 0.0 0.20.4 0.60.8 1.0 1.2 TJ = 150 °C VSD -Source-to-Drain Voltage (V) TJ = 25 °C 0 25 50 75 100 125 150 TJ - Temperature (°C) 10-3 10-5 10-6 10-4 10-2 10-1 10 V 30 V 20 V On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.010 0.014 0.018 0.022 0.026 0.030 04 8 12 16 20 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ =125 °C ID =9.6 A 0 10 20 30 40 0.01 0.1 1 10 Time (s) Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 ms 1 s DC Limited byRDS(on)* BVDSS Limited 10 ms 10 s 1 ms 100 µs |
Nº de peça semelhante - SI4622DY-T1-E3 |
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Descrição semelhante - SI4622DY-T1-E3 |
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