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SI4670DY-T1-E3 Folha de dados(PDF) 8 Page - Vishay Siliconix |
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SI4670DY-T1-E3 Folha de dados(HTML) 8 Page - Vishay Siliconix |
8 / 15 page www.vishay.com 8 Document Number: 69595 S09-2109-Rev. C, 12-Oct-09 Vishay Siliconix Si4670DY CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 6 12 18 24 30 0.0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 4 V VGS = 3 V 0.015 0.020 0.025 0.030 0.035 0 6 12 18 24 30 ID - Drain Current (A) VGS = 10 V VGS = 4.5 V ID = 7 A 0 2 4 6 8 10 0 369 12 Qg - Total Gate Charge (nC) VDS = 24 V VDS = 13 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TC = 25 °C TC = 125 °C TC = - 55 °C 0 200 400 600 800 1000 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Ciss Crss Coss TJ - Junction Temperature (°C) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 ID = 7 A VGS = 10 V, 4.5 V |
Nº de peça semelhante - SI4670DY-T1-E3 |
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Descrição semelhante - SI4670DY-T1-E3 |
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