SI4714DY datasheet(5/10 Pages) VISHAY

Nome de Peças	SI4714DY

Descrição Electrónicos	N-Channel 30 V (D-S) MOSFET with Schottky Diode

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Document Number: 67942

S11-1180-Rev. A, 13-Jun-11

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Vishay Siliconix

Si4714DY

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This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

3

6

10

13

16

0

25

50

75

100

125

150

T

C - Case Temperature (°C)

Power Derating, Junction-to-Foot

0.0

1.2

2.4

3.6

4.8

6.0

025

50

75

100

125

150

T

C - Case Temperature (°C)

Power Derating, Junction-to-Ambient

0.0

0.4

0.8

1.2

1.6

2.0

025

50

75

100

125

150

T

A - Ambient Temperature (°C)

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