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SI4916DY-T1-GE3 Folha de dados(PDF) 4 Page - Vishay Siliconix |
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SI4916DY-T1-GE3 Folha de dados(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 74331 S09-0540-Rev. B, 06-Apr-09 Vishay Siliconix Si4916DY CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 5 10 15 20 25 30 35 40 0.00 0.30 0.60 0.90 1.20 1.50 VGS = 10 thru 5 V VDS – Drain-to-Source Voltage (V) 3 V 4 V 0.010 0.013 0.016 0.019 0.022 0.025 0 5 10 15 20 25 30 35 40 ID – Drain Current (A) VGS = 4.5 V VGS = 10 V 0 1 2 3 4 5 6 012 34 56 789 ID = 7.5 A Qg – Total Gate Charge (nC) VDS = 15 V VDS = 10 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 5 10 15 20 25 30 35 40 0 1234 5 TC = 125 °C - 55 °C 25 °C VGS – Gate-to-Source Voltage (V) 0 150 300 450 600 750 900 1050 0 6 12 18 24 30 VDS – Drain-to-Source Voltage (V) Crss Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V and 4.5 V ID = 7.5 A TJ – Junction Temperature (°C) |
Nº de peça semelhante - SI4916DY-T1-GE3 |
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Descrição semelhante - SI4916DY-T1-GE3 |
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