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SI4916DY-T1-GE3 Folha de dados(PDF) 4 Page - Vishay Siliconix

Nome de Peças SI4916DY-T1-GE3
Descrição Electrónicos  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
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Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
Vishay Siliconix
Si4916DY
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
30
35
40
0.00
0.30
0.60
0.90
1.20
1.50
VGS = 10 thru 5 V
VDS – Drain-to-Source Voltage (V)
3 V
4 V
0.010
0.013
0.016
0.019
0.022
0.025
0
5
10
15
20
25
30
35
40
ID – Drain Current (A)
VGS = 4.5 V
VGS = 10 V
0
1
2
3
4
5
6
012
34
56
789
ID = 7.5 A
Qg – Total Gate Charge (nC)
VDS = 15 V
VDS = 10 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
5
10
15
20
25
30
35
40
0
1234
5
TC = 125 °C
- 55 °C
25 °C
VGS – Gate-to-Source Voltage (V)
0
150
300
450
600
750
900
1050
0
6
12
18
24
30
VDS – Drain-to-Source Voltage (V)
Crss
Coss
Ciss
0.6
0.8
1.0
1.2
1.4
1.6
- 50
- 25
0
25
50
75
100
125
150
VGS = 10 V and 4.5 V
ID = 7.5 A
TJ – Junction Temperature (°C)


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