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SI4992EY-T1-E3 Folha de dados(PDF) 3 Page - Vishay Siliconix |
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SI4992EY-T1-E3 Folha de dados(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 73082 S09-1341-Rev. C, 13-Jul-09 www.vishay.com 3 Vishay Siliconix Si4992EY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 04 8 12 16 20 ID - Drain Current (A) VGS =10 V VGS = 4.5 V 0 2 4 6 8 10 0 3 6 9 12 15 VDS =50 V ID =4.8 A Qg - Total Gate Charge (nC) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 175 °C TJ =25 °C 30 10 1 VSD - Source-to-Drain Voltage (V) Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 100 200 300 400 500 600 700 800 900 0.0 12.5 25.0 37.5 50.0 62.5 75.0 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 175 VGS =10 V ID =4.8 A TJ - Junction Temperature (°C) 0.00 0.02 0.04 0.06 0.08 0.10 0 2468 10 ID = 4.8 V VGS - Gate-to-Source Voltage (V) |
Nº de peça semelhante - SI4992EY-T1-E3 |
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Descrição semelhante - SI4992EY-T1-E3 |
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