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SI5513CDC Folha de dados(PDF) 8 Page - Vishay Siliconix |
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SI5513CDC Folha de dados(HTML) 8 Page - Vishay Siliconix |
8 / 16 page www.vishay.com 8 Document Number: 68806 S10-0547-Rev. C, 08-Mar-10 Vishay Siliconix Si5513CDC P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 2 4 6 8 0 1234 5 VDS - Drain-to-Source Voltage (V) VGS =5 V thru 3 V VGS =1.5 V VGS =2 V VGS =2.5 V 0.00 0.05 0.10 0.15 0.20 0.25 0.30 024 6 8 ID - Drain Current (A) VGS =2.5 V VGS =4.5 V 0 2 4 6 8 10 024 6 8 Qg - Total Gate Charge (nC) VDS =16 V ID =2.4 A VDS =10 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC =- 55 °C 0 90 180 270 360 450 04 8 12 16 20 Ciss VDS - Drain-to-Source Voltage (V) Coss Crss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) VGS = - 4.5 V;ID =- 2.4 A VGS = - 2.5 V;ID = - 1.9 A |
Nº de peça semelhante - SI5513CDC_10 |
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Descrição semelhante - SI5513CDC_10 |
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