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SI6562CDQ Folha de dados(PDF) 9 Page - Vishay Siliconix |
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SI6562CDQ Folha de dados(HTML) 9 Page - Vishay Siliconix |
9 / 17 page Document Number: 68954 S-82575-Rev. A, 27-Oct-08 www.vishay.com 9 Vishay Siliconix Si6562CDQ New Product P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 10 1 100 TJ = 25 °C TJ = 150 °C VSD -Source-to-Drain Voltage (V) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Single Pulse Power 0.00 0.02 0.04 0.06 0.08 0.10 0 1 234 5 TJ = 25 °C TJ = 125 °C ID =5.1 A VGS - Gate-to-Source Voltage (V) 0 4 8 12 16 20 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 1s,10s * Limited byRDS(on) BVDSS Limited 1ms 100 µs 10 ms DC 100 ms VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified |
Nº de peça semelhante - SI6562CDQ |
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Descrição semelhante - SI6562CDQ |
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