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SI6562CDQ-T1-GE3 Folha de dados(PDF) 3 Page - Vishay Siliconix

Nome de Peças SI6562CDQ-T1-GE3
Descrição Electrónicos  N- and P-Channel 20-V (D-S) MOSFETs
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI6562CDQ-T1-GE3 Folha de dados(HTML) 3 Page - Vishay Siliconix

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Document Number: 68954
S-82575-Rev. A, 27-Oct-08
www.vishay.com
3
Vishay Siliconix
Si6562CDQ
New Product
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Dynamica
Turn-On Delay Time
td(on)
N-Channel
VDD = 10 V, RL = 2.2 Ω
ID ≅ 4.5 A, VGEN = 4.5 V, Rg = 1 Ω
P-Channel
VDD = - 10 V, RL = 2.4 Ω
ID ≅ - 4.1 A, VGEN = - 4.5 V, Rg = 1 Ω
N-Ch
12
20
ns
P-Ch
30
45
Rise Time
tr
N-Ch
10
15
P-Ch
25
40
Turn-Off Delay Time
td(off)
N-Ch
25
40
P-Ch
45
70
Fall Time
tf
N-Ch
10
15
P-Ch
15
25
Turn-On Delay Time
td(on)
N-Channel
VDD = 10 V, RL = 2.2 Ω
ID ≅ 4.5 A, VGEN = 10 V, Rg = 1 Ω
P-Channel
VDD = - 10 V, RL = 2.4 Ω
ID ≅ - 4.1 A, VGEN = - 10 V, Rg = 1 Ω
N-Ch
10
15
ns
P-Ch
10
15
Rise Time
tr
N-Ch
10
15
P-Ch
10
15
Turn-Off Delay Time
td(off)
N-Ch
20
30
P-Ch
45
70
Fall Time
tf
N-Ch
8
15
P-Ch
15
25
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
N-Ch
1.3
A
P-Ch
- 1.4
Pulse Diode Forward Currenta
ISM
N-Ch
30
P-Ch
- 30
Body Diode Voltage
VSD
IS = 4.5 A, VGS = 0 V
N-Ch
0.8
1.2
V
IS = - 4.1 A, VGS = 0 V
P-Ch
- 0.8
- 1.2
Body Diode Reverse Recovery Time
trr
N-Channel
IF = 4.5 A, dI/dt = 100 A/µs, TJ = 25 °C
P-Channel
IF = - 4.1 A, dI/dt = - 100 A/µs, TJ = 25 °C
N-Ch
15
30
ns
P-Ch
35
55
Body Diode Reverse Recovery Charge
Qrr
N-Ch
6
12
nC
P-Ch
21
35
Reverse Recovery Fall Time
ta
N-Ch
7.6
ns
P-Ch
18
Reverse Recovery Rise Time
tb
N-Ch
7.4
P-Ch
17


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