SI7212DN-T1-GE3 datasheet(2/12 Pages) VISHAY

Nome de Peças	SI7212DN-T1-GE3

Descrição Electrónicos	Dual N-Channel 30-V (D-S) MOSFET

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Document Number: 73128

S09-1815-Rev. F, 14-Sep-09

Vishay Siliconix

Si7212DN

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.6

1.6

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

µA

VDS = 30 V, VGS = 0 V, TJ = 55 °C

5

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

20

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 6.8 A

0.030

0.036

Ω

VGS = 4.5 V, ID = 6.6 A

0.032

0.039

Forward Transconductancea

gfs

VDS = 10 V, ID = 6.8 A

20

S

Diode Forward Voltagea

VSD

IS = 2.2 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = 15 V, VGS = 4.5 V, ID = 6.8 A

711

nC

Gate-Source Charge

Qgs

2

Gate-Drain Charge

Qgd

1.7

Gate Resistance

Rg

f = 1 MHz

0.6

3.0

4.5

Ω

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 15 Ω

ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω

10

15

ns

Rise Time

tr

12

20

Turn-Off Delay Time

td(off)

30

45

Fall Time

tf

10

15

Source-Drain Reverse Recovery Time

trr

IF = 2.2 A, dI/dt = 100 A/µs

15

30

Output Characteristics

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 10 V thru 3 V

VDS - Drain-to-Source Voltage (V)

2 V

Transfer Characteristics

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

TC = 125 °C

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

Nº de peça semelhante - SI7212DN-T1-GE3

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI7212DN-T1-E3	94Kb / 6P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Jun-05

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Descrição semelhante - SI7212DN-T1-GE3

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI7212DN	94Kb / 6P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Jun-05
DinTek Semiconductor Co...	DTM4936	294Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4932DY	111Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 22-Dec-08
Vishay Siliconix	SIZ340DT	372Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. B, 24-Mar-14
Analog Power	AM6926NH	398Kb / 5P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4276DY-T1-E3	232Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 11-Apr-11
	SI4276DY	304Kb / 15P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 31-May-10
	SI5906DU	164Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 20-Jul-09
Analog Power	AM4934N	95Kb / 3P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4936ADY	61Kb / 4P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Oct-03

More results

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