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SI7812DN-T1-E3 Folha de dados(PDF) 2 Page - Vishay Siliconix |
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SI7812DN-T1-E3 Folha de dados(HTML) 2 Page - Vishay Siliconix |
2 / 14 page www.vishay.com 2 Document Number: 73332 S-83050-Rev. D, 29-Dec-08 Vishay Siliconix Si7812DN Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 81 °C/W. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b t ≤ 10 s RthJA 26 33 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.9 2.4 SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 75 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 65 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 6.4 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 2.0 3.0 V VDS = VGS, ID = 5 mA 2.3 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 75 V, VGS = 0 V 1 µA VDS = 75 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 25 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 7.2 A 0.031 0.037 Ω VGS = 4.5 V, ID = 6.4 A 0.038 0.046 Forward Transconductancea gfs VDS = 15 V, ID = 7.2 A 23 S Dynamicb Input Capacitance Ciss VDS = 35 V, VGS = 0 V, f = 1 MHz 840 pF Output Capacitance Coss 110 Reverse Transfer Capacitance Crss 50 Total Gate Charge Qg VDS = 38 V, VGS = 10 V, ID = 7.2 A 16 24 nC VDS = 38 V, VGS = 4.5 V, ID = 7.2 A 812 Gate-Source Charge Qgs 2.8 Gate-Drain Charge Qgd 3.6 Gate Resistance Rg f = 1 MHz 1 Ω Turn-On Delay Time td(on) VDD = 38 V, RL = 6.7 Ω ID ≅ 5.7 A, VGEN = 4.5 V, Rg = 1 Ω 20 30 ns Rise Time tr 130 200 Turn-Off Delay Time td(off) 20 30 Fall Time tf 50 75 Turn-On Delay Time td(on) VDD = 38 V, RL = 6.7 Ω ID ≅ 5.7 A, VGEN = 10 V, Rg = 1 Ω 15 25 Rise Time tr 20 30 Turn-Off Delay Time td(off) 35 40 Fall Time tf 10 15 |
Nº de peça semelhante - SI7812DN-T1-E3 |
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Descrição semelhante - SI7812DN-T1-E3 |
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