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SI7812DN-T1-E3 Folha de dados(PDF) 4 Page - Vishay Siliconix |
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SI7812DN-T1-E3 Folha de dados(HTML) 4 Page - Vishay Siliconix |
4 / 14 page www.vishay.com 4 Document Number: 73332 S-83050-Rev. D, 29-Dec-08 Vishay Siliconix Si7812DN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 5 10 15 20 25 0.0 0.4 0.8 1.2 1.6 2.0 VGS = 10 thru 4 V 3 V VDS - Drain-to-Source Voltage (V) 0.020 0.024 0.028 0.032 0.036 0.040 0 5 10 15 20 25 VGS = 10 V ID - Drain Current (A) VGS = 4.5 V 0 2 4 6 8 10 04 8 12 16 20 ID = 7.2 A Qg - Total Gate Charge (nC) VDS = 53 V VDS = 38 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 °C TC = 125 °C -55 °C VGS - Gate-to-Source Voltage (V) 0 200 400 600 800 1000 1200 0 1530456075 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V TJ - Junction Temperature (°C) VGS = 4.5 V ID = 7.2 A |
Nº de peça semelhante - SI7812DN-T1-E3 |
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Descrição semelhante - SI7812DN-T1-E3 |
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