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SIZ900DT-T1-GE3 Folha de dados(PDF) 6 Page - Vishay Siliconix |
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SIZ900DT-T1-GE3 Folha de dados(HTML) 6 Page - Vishay Siliconix |
6 / 14 page www.vishay.com 6 Document Number: 67344 S11-1652-Rev. B, 15-Aug-11 Vishay Siliconix SiZ900DT New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 10 20 30 40 50 60 70 0 25 50 75 100 125 150 T C - Case Temperature (°C) Package Limited Power, Junction-to-Case 0 10 20 30 40 50 25 50 75 100 125 150 T C - Case Temperature (°C) |
Nº de peça semelhante - SIZ900DT-T1-GE3 |
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Descrição semelhante - SIZ900DT-T1-GE3 |
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