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CSD16301Q2 Folha de dados(PDF) 1 Page - Texas Instruments |
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CSD16301Q2 Folha de dados(HTML) 1 Page - Texas Instruments |
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1 / 9 page  1 D 2 D D 3 D 4 D 5 G 6 S S P0108-01 VGS − Gate to Source Voltage − V 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 8 9 10 G006 ID = 4A TC = 125°C TC = 25°C Qg − Gate Charge − nC 0 1 2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 G003 ID = 4A VDS = 12.5V CSD16301Q2 www.ti.com SLPS235C –OCTOBER 2009–REVISED JULY 2011 N-Channel NexFET ™ Power MOSFETs Check for Samples: CSD16301Q2 1 FEATURES PRODUCT SUMMARY 2 • Ultralow Qg and Qgd VDS Drain to Source Voltage 25 V • Low Thermal Resistance Qg Gate Charge Total (–4.5V) 2 nC • Pb Free Terminal Plating Qgd Gate Charge Gate to Drain 0.4 nC • RoHS Compliant VGS = 3V 27 mΩ • Halogen Free RDS(on) Drain to Source On Resistance VGS = 4.5V 23 mΩ • SON 2-mm × 2-mm Plastic Package VGS = 8V 19 mΩ VGS(th) Threshold Voltage 1.1 V APPLICATIONS ORDERING INFORMATION • DC-DC Converters Device Package Media Qty Ship • Battery and Load Management Applications 13-Inch Tape and 3000 Reel Reel SON 2-mm × 2-mm DESCRIPTION CSD16301Q2 Plastic Package 7-Inch Tape and 3000 The NexFET™ power MOSFET has been designed Reel Reel to minimize losses in power conversion and load management applications. The SON 2x2 offers ABSOLUTE MAXIMUM RATINGS excellent thermal performance for the size of the TA = 25°C unless otherwise stated VALUE UNIT package. VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +10 / –8 V Figure 1. Top View Continuous Drain Current, TC = 25°C 5 A ID Continuous Drain Current(1) 5 A IDM Pulsed Drain Current, TA = 25°C(2) 20 A PD Power Dissipation(1) 2.3 W TJ, Operating Junction and Storage – 55 to 150 ° C TSTG Temperature Range Avalanche Energy, single pulse EAS 10 mJ ID = 14A, L = 0.1mH, RG = 25Ω (1) Packaged Limited (2) Pulse duration 10μs, duty cycle ≤2% RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2009–2011, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
Nº de peça semelhante - CSD16301Q2_11 |
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Descrição semelhante - CSD16301Q2_11 |
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