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CSD16301Q2 Folha de dados(PDF) 2 Page - Texas Instruments

Nome de Peças CSD16301Q2
Descrição Electrónicos  N-Channel NexFET??Power MOSFETs
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Fabricante Electrônico  TI [Texas Instruments]
Página de início  http://www.ti.com
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CSD16301Q2 Folha de dados(HTML) 2 Page - Texas Instruments

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CSD16301Q2
SLPS235C –OCTOBER 2009–REVISED JULY 2011
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise specified
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = 250μA
25
V
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 20V
1
μ
A
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = +10/–8V
100
nA
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, IDS = 250μA
0.9
1.1 1.55
V
VGS = 3V, IDS = 4A
27
34
mΩ
RDS(on)
Drain to Source On Resistance
VGS = 4.5V, IDS = 4A
23
29
mΩ
VGS = 8V, IDS = 4A
19
24
mΩ
gfs
Transconductance
VDS = 15V, IDS = 4A
16.5
S
Dynamic Characteristics
CISS
Input Capacitance
260
340
pF
COSS
Output Capacitance
VGS = 0V, VDS = 12.5V, f = 1MHz
165
215
pF
CRSS
Reverse Transfer Capacitance
13
17
pF
Rg
Series Gate Resistance
1.3
2.6
Qg
Gate Charge Total (4.5V)
2
2.8
nC
Qgd
Gate Charge – Gate to Drain
0.4
nC
VDS = 10V, IDS = 4A
Qgs
Gate Charge Gate to Source
0.6
nC
Qg(th)
Gate Charge at Vth
0.3
nC
QOSS
Output Charge
VDS = 12.5V, VGS = 0V
3
nC
td(on)
Turn On Delay Time
2.7
ns
tr
Rise Time
4.4
ns
VDS = 12.5V, VGS = 4.5V, IDS = 4A
RG = 2Ω
td(off)
Turn Off Delay Time
4.1
ns
tf
Fall Time
1.7
ns
Diode Characteristics
VSD
Diode Forward Voltage
IDS = 4A, VGS = 0V
0.8
1
V
Qrr
Reverse Recovery Charge
VDD = 12.5V, IF = 4A, di/dt = 200A/μs
5.1
nC
trr
Reverse Recovery Time
VDD = 12.5V, IF = 4A, di/dt = 200A/μs
11
ns
THERMAL INFORMATION
CSD16301Q2
THERMAL METRIC(1)(2)
UNITS
6 PINS
θJA
Junction-to-ambient thermal resistance (3)(4)
69
θJCtop
Junction-to-case (top) thermal resistance (3)
8.4
θJB
Junction-to-board thermal resistance
°
C/W
ψJT
Junction-to-top characterization parameter
ψJB
Junction-to-board characterization parameter
θJCbot
Junction-to-case (bottom) thermal resistance
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator.
(3) RθJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(4) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
2
Copyright © 2009–2011, Texas Instruments Incorporated


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