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CSD16301Q2 Folha de dados(PDF) 2 Page - Texas Instruments |
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CSD16301Q2 Folha de dados(HTML) 2 Page - Texas Instruments |
2 / 9 page CSD16301Q2 SLPS235C –OCTOBER 2009–REVISED JULY 2011 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS TA = 25°C, unless otherwise specified PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = 250μA 25 V IDSS Drain to Source Leakage Current VGS = 0V, VDS = 20V 1 μ A IGSS Gate to Source Leakage Current VDS = 0V, VGS = +10/–8V 100 nA VGS(th) Gate to Source Threshold Voltage VDS = VGS, IDS = 250μA 0.9 1.1 1.55 V VGS = 3V, IDS = 4A 27 34 mΩ RDS(on) Drain to Source On Resistance VGS = 4.5V, IDS = 4A 23 29 mΩ VGS = 8V, IDS = 4A 19 24 mΩ gfs Transconductance VDS = 15V, IDS = 4A 16.5 S Dynamic Characteristics CISS Input Capacitance 260 340 pF COSS Output Capacitance VGS = 0V, VDS = 12.5V, f = 1MHz 165 215 pF CRSS Reverse Transfer Capacitance 13 17 pF Rg Series Gate Resistance 1.3 2.6 Ω Qg Gate Charge Total (4.5V) 2 2.8 nC Qgd Gate Charge – Gate to Drain 0.4 nC VDS = 10V, IDS = 4A Qgs Gate Charge Gate to Source 0.6 nC Qg(th) Gate Charge at Vth 0.3 nC QOSS Output Charge VDS = 12.5V, VGS = 0V 3 nC td(on) Turn On Delay Time 2.7 ns tr Rise Time 4.4 ns VDS = 12.5V, VGS = 4.5V, IDS = 4A RG = 2Ω td(off) Turn Off Delay Time 4.1 ns tf Fall Time 1.7 ns Diode Characteristics VSD Diode Forward Voltage IDS = 4A, VGS = 0V 0.8 1 V Qrr Reverse Recovery Charge VDD = 12.5V, IF = 4A, di/dt = 200A/μs 5.1 nC trr Reverse Recovery Time VDD = 12.5V, IF = 4A, di/dt = 200A/μs 11 ns THERMAL INFORMATION CSD16301Q2 THERMAL METRIC(1)(2) UNITS 6 PINS θJA Junction-to-ambient thermal resistance (3)(4) 69 θJCtop Junction-to-case (top) thermal resistance (3) 8.4 θJB Junction-to-board thermal resistance ° C/W ψJT Junction-to-top characterization parameter ψJB Junction-to-board characterization parameter θJCbot Junction-to-case (bottom) thermal resistance (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. (2) For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator. (3) RθJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (4) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 2 Copyright © 2009–2011, Texas Instruments Incorporated |
Nº de peça semelhante - CSD16301Q2_11 |
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Descrição semelhante - CSD16301Q2_11 |
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