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CSD17507Q5A Folha de dados(PDF) 1 Page - Texas Instruments |
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CSD17507Q5A Folha de dados(HTML) 1 Page - Texas Instruments |
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1 / 11 page  1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 VGS - Gate-to-Source Voltage - V 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 TC = 25°C TC = 125°C G006 ID = 11A Qg - Gate Charge - nC 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 20 2 6 10 14 18 G003 ID = 11A VDS = 15V CSD17507Q5A www.ti.com SLPS243E – JULY 2010 – REVISED JULY 2011 30V, N-Channel NexFET ™ Power MOSFETs Check for Samples: CSD17507Q5A PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 • Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 2.8 nC • Low Thermal Resistance Qgd Gate Charge Gate to Drain 0.7 nC • Avalanche Rated VGS = 4.5V 11.8 m Ω RDS(on) Drain to Source On Resistance VGS = 10V 9 m Ω • Pb Free Terminal Plating VGS(th) Threshold Voltage 1.6 V • RoHS Compliant • Halogen Free Text Added For Spacing • SON 5-mm × 6-mm Plastic Package ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS SON 5-mm × 6-mm 13-Inch Tape and CSD17507Q5A 2500 Plastic Package Reel Reel • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems Text Added For Spacing • Optimized for Control FET Applications ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VALUE UNIT DESCRIPTION VDS Drain to Source Voltage 30 V The NexFET ™ power MOSFET has been designed VGS Gate to Source Voltage ±20 V to minimize losses in power conversion applications. Continuous Drain Current, TC = 25°C 65 A ID Top View Continuous Drain Current(1) 13 A IDM Pulsed Drain Current, TA = 25°C (2) 85 A PD Power Dissipation(1) 3 W TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, single pulse EAS 45 mJ ID = 30A, L = 0.1mH, RG = 25Ω (1) Typical RθJA = 44°C/W on 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300μs, duty cycle ≤2% Text 4 Spacing Text 4 Spacing RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2010–2011, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
Nº de peça semelhante - CSD17507Q5A |
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Descrição semelhante - CSD17507Q5A |
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