BC369 datasheet(2/4 Pages) SIEMENS

Nome de Peças	BC369

Descrição Electrónicos	PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)

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Fabricante Electrônico	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

2

BC 369

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Base-emitter voltage1)

IC = 5 mA; VCE = 10 V

IC = 1 A; VCE = 1 V

VBE

–

0.6

–

1

V

Collector-emitter breakdown voltage

IC = 30 mA

V(BR)CE0

20

–

Collector-base breakdown voltage

IC = 10

µA

V(BR)CB0

25

–

DC current gain

IC = 5 mA; VCE = 10 V

IC = 500 mA; VCE = 1 V1)

IC = 1 A; VCE = 1 V1)

hFE

50

85

60

–

160

–

375

–

MHz

Transition frequency

IC = 100 mA, VCE = 5 V, f = 20 MHz

fT

–

100

–

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

AC characteristics

Emitter-base breakdown voltage

IE = 1

µA

V(BR)EB0

5––

nA

µA

Collector cutoff current

VCB = 25 V

VCB = 25 V, TA = 150 ˚C

ICB0

–

100

10

nA

Emitter cutoff current

VEB = 5 V

IEB0

–

100

V

Collector-emitter saturation voltage1)

IC = 1 A; IB = 100 mA

VCEsat

–

0.5

1)

Pulse test: t

≤ 300 µs, D ≤ 2%.

Nº de peça semelhante - BC369

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