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BF720 Folha de dados(PDF) 2 Page - Siemens Semiconductor Group |
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BF720 Folha de dados(HTML) 2 Page - Siemens Semiconductor Group |
2 / 4 page Semiconductor Group 2 BF 720 BF 722 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. – DC current gain1) IC = 25 mA, VCE = 20 V hFE 50 – – nA µA Collector-emitter cutoff current VCE = 200 V, RBE = 2.7 k Ω VCE = 200 V, RBE = 2.7 k Ω, TA = 150 ˚C ICER – – – – 50 10 Collector-emitter breakdown voltage IC = 10 µA, RBE = 2.7 k Ω BF 720 V(BR)CER 300 – – V Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BF 722 V(BR)CE0 250 – – nA Collector-base cutoff current VCB = 200 V, IE = 0 ICB0 ––10 Unit Values Parameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 10 µA, IB = 0 BF 720 BF 722 V(BR)CB0 300 250 – – – – Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EB0 5–– V Collector-emitter saturation voltage1) IC = 30 mA, IB = 5 mA VCEsat – – 0.6 µA Emitter-base cutoff current VEB = 5 V, IC = 0 IEB0 ––10 MHz Transition frequency IC = 10 mA, VCE = 10 V, f = 100 MHz fT – 100 – AC characteristics pF Collector-base capacitance VCB = 30 V, IC = 0, f = 1 MHz Cobo – 0.8 – 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. |
Nº de peça semelhante - BF720 |
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Descrição semelhante - BF720 |
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