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BF994S Folha de dados(PDF) 2 Page - Siemens Semiconductor Group

Nome de Peças BF994S
Descrição Electrónicos  Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners)
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Fabricante Electrônico  SIEMENS [Siemens Semiconductor Group]
Página de início  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BF994S Folha de dados(HTML) 2 Page - Siemens Semiconductor Group

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BF 994 S
BF 994 S
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
V
Drain-source breakdown voltage
ID = 10
µA, – VG1S = – VG2S = 4 V
V(BR) DS
20
nA
Gate 1 source leakage current
± VG1S = 5 V, VG2S = VDS = 0
± IG1SS
––50
Gate 2 source leakage current
± VG2S = 5 V, VG1S = VDS = 0
± IG2SS
––50
Gate 1 source breakdown voltage
± IG1S = 10 mA, VG2S = VDS = 0
± V(BR) G1SS
8.5
14
Gate 2 source breakdown voltage
± IG2S = 10 mA, VG1S = VDS = 0
± V(BR) G2SS
8.5
14
V
Gate 1 source pinch-off voltage
VDS = 15 V, VG2S = 4 V, ID = 20
µA
– VG1S (p)
2.5
Gate 2 source pinch-off voltage
VDS = 15 V, VG1S = 0, ID = 20
µA
– VG2S (p)
2.0
mA
Drain current
VDS = 15 V, VG1S = 0, VG2S = 4 V
IDSS
2–20
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC Characteristics


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