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BF994S Folha de dados(PDF) 2 Page - Siemens Semiconductor Group |
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BF994S Folha de dados(HTML) 2 Page - Siemens Semiconductor Group |
2 / 7 page BF 994 S BF 994 S Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. V Drain-source breakdown voltage ID = 10 µA, – VG1S = – VG2S = 4 V V(BR) DS 20 – – nA Gate 1 source leakage current ± VG1S = 5 V, VG2S = VDS = 0 ± IG1SS ––50 Gate 2 source leakage current ± VG2S = 5 V, VG1S = VDS = 0 ± IG2SS ––50 Gate 1 source breakdown voltage ± IG1S = 10 mA, VG2S = VDS = 0 ± V(BR) G1SS 8.5 – 14 Gate 2 source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR) G2SS 8.5 – 14 V Gate 1 source pinch-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 µA – VG1S (p) – – 2.5 Gate 2 source pinch-off voltage VDS = 15 V, VG1S = 0, ID = 20 µA – VG2S (p) – – 2.0 mA Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V IDSS 2–20 Unit Values Parameter Symbol min. typ. max. DC Characteristics |
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