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KTD1898-O Folha de dados(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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KTD1898-O Folha de dados(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page KTD1898 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 10-Nov-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 3 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Small Flat Package General Purpose Application CLASSIFICATION OF hFE(1) Product-Rank KTD1898-O KTD1898-Y KTD1898-GR Range 70~140 120~240 200~400 Marking ZO ZY ZG PACKAGE INFORMATION ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current-Continuous IC 1 A Collector Power Dissipation PC 500 mW Maximum Junction to Ambient RθJA 250 °C / W Junction & Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Collector-Base Breakdown Voltage V(BR)CBO 100 - - V IC=0.1mA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 80 - - V IC=1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 5 - - V IE=0.1mA, IC=0 Collector Cut-Off Current ICBO - - - 0.1 µA VCB=80V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 µA VEB=4V, IC=0 DC Current Gain hFE 70 - 400 VCE=3V, IC= 500mA Collector-Emitter Saturation voltage VCE(sat) - - 0.4 V IC=500mA, IB=20mA Transition Frequency fT - 100 - MHz VCE=10V,IC=50mA,f=100MHz Collector Output Capacitance COB - 20 - pF VCB=10V, IE=0, f=1MHz Package MPQ Leader Size SOT-89 1K 7 inch SOT-89 A E C D B K H F G L J 1 2 3 4 B C E REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 4.40 4.60 G 0.40 0.58 B 3.94 4.25 H 1.50 TYP C 1.40 1.60 J 3.00 TYP D 2.25 2.60 K 0.32 0.52 E 1.50 1.85 L 0.35 0.44 F 0.89 1.20 |
Nº de peça semelhante - KTD1898-O |
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Descrição semelhante - KTD1898-O |
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