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1N4448W-V Folha de dados(PDF) 1 Page - Vishay Siliconix

Nome de Peças 1N4448W-V
Descrição Electrónicos  Small Signal Fast Switching Diode
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
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1N4448W-V
Document Number 85722
Rev. 1.4, 17-Aug-10
Vishay Semiconductors
www.vishay.com
1
17431
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Small Signal Fast Switching Diode
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode
• This diode is also available in other case
styles including the DO-35 case with the
type designation 1N4448, the MiniMELF
case with the type designation LL4448,
and the SOT-23 case with the type designation
IMBD4448
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature.
Part
Ordering code
Type Marking
Remarks
1N4448W-V
1N4448W-V-GS18 or 1N4448W-V-GS08
A3
Tape and Reel
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
VR
75
V
Peak reverse voltage
VRM
100
V
Average rectified current half
wave rectification with resistive
load
f
≥ 50 Hz
IF(AV)
1501)
mA
Surge current
t < 1 s and Tj = 25 °C
IFSM
500
mA
Power dissipation
Ptot
5001)
mW


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