BTS710L1 datasheet(4/14 Pages) SIEMENS

Nome de Peças	BTS710L1

Descrição Electrónicos	Smart Four Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)

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Fabricante Electrônico	SIEMENS [Siemens Semiconductor Group]

Página de início	http://www.siemens.com/

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4 / 14 page

BTS 710 L1

Parameter and Conditions, each of the four channels

Symbol

Values

Unit

at Tj = 25 °C,

Vbb = 12 V unless otherwise specified

min

typ

max

Semiconductor Group

4

Nominal load current

one channel active:

two parallel channels active:

four parallel channels active:

Device on PCB5),

Ta

= 85°C, Tj ≤ 150°C

IL(NOM)

1.7

2.6

4.1

1.9

2.8

4.4

--

A

Output current while GND disconnected or pulled

up; Vbb = 30 V, VIN = 0, see diagram page 9

IL(GNDhigh)

--

10

mA

Turn-on time

to 90%

VOUT:

Turn-off time

to 10%

VOUT:

RL = 12

Ω, Tj =-40...+150°C

ton

toff

80

200

400

µs

Slew rate on

10 to 30%

VOUT, RL = 12

Ω,

Tj =-40...+150°C:

d

V/dton

0.1

--

1

V/

µs

Slew rate off

70 to 40%

VOUT, RL = 12

Ω,

Tj =-40...+150°C:

-d

V/dtoff

0.1

--

1

V/

µs

Operating Parameters

Operating voltage7)

Tj =-40...+150°C: Vbb(on)

5.0

--

24

V

Undervoltage shutdown

Tj =-40...+150°C: Vbb(under)

3.5

--

5.0

V

Undervoltage restart

Tj =-40...+25°C:

Tj =+150°C:

Vbb(u rst)

--

5.0

7.0

V

Undervoltage restart of charge pump

see diagram page 13

Tj =-40...+150°C:

Vbb(ucp)

--

5.6

7.0

V

Undervoltage hysteresis

∆V

bb(under) = Vbb(u rst) - Vbb(under)

∆V

bb(under)

--

0.2

--

V

Overvoltage shutdown

Tj =-40...+150°C: Vbb(over)

24

--

34

V

Overvoltage restart

Tj =-40...+150°C: Vbb(o rst)

23

--

V

Overvoltage hysteresis

Tj =-40...+150°C:

∆V

bb(over)

--

0.5

--

V

Overvoltage protection8)

Tj =-40...+150°C:

I bb = 40 mA

Vbb(AZ)

42

47

--

V

Standby current, all channels off

Tj =25°C:

VIN = 0

Tj =150°C:

Ibb(off)

--

28

44

60

70

µA

Leakage output current (included in

Ibb(off))

VIN = 0

IL(off)

--

12

µA

Operating current 9),

VIN = 5V, Tj =-40...+150°C

IGND = IGND1/2 + IGND3/4,

one channel on:

four channels on:

IGND

--

2

8

3

12

mA

7)

At supply voltage increase up to

Vbb = 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V

8)

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