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BUZ21 Folha de dados(PDF) 1 Page - Siemens Semiconductor Group

Nome de Peças BUZ21
Descrição Electrónicos  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
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Fabricante Electrônico  SIEMENS [Siemens Semiconductor Group]
Página de início  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ21 Folha de dados(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
1
01/97
BUZ 21
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 21
100 V
21 A
0.085
TO-220 AB
C67078-S1308-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
TC = 25 °C
ID
21
A
Pulsed drain current
TC = 25 °C
IDpuls
84
Avalanche current,limited by
Tjmax
IAR
21
Avalanche energy,periodic limited by
Tjmax
EAR
11
mJ
Avalanche energy, single pulse
ID = 21 A, VDD = 25 V, RGS = 25 Ω
L = 340 µH, Tj = 25 °C
EAS
100
Gate source voltage
VGS
± 20
V
Power dissipation
TC = 25 °C
Ptot
75
W
Operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip case
RthJC
≤ 1.67
K/W
Thermal resistance, chip to ambient
RthJA
75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56


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