2SK1152L-E datasheet(1/7 Pages) RENESAS

Nome de Peças	2SK1152L-E

Descrição Electrónicos	Silicon N Channel MOS FET

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R07DS0397EJ0300 Rev.3.00

Page 1 of 6

May 16, 2011

Preliminary Datasheet

2SK1151(L), 2SK1151(S),

2SK1152(L), 2SK1152(S)

Silicon N Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Outline

RENESAS Package code: PRSS0004ZD-A

(Package name: DPAK(L)-(1))

1. Gate

2. Drain

3. Source

4. Drain

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK(S))

D

G

S

1

2

3

4

1

2

3

4

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

2SK1151

450

Drain to source voltage

2SK1152

VDSS

500

V

Gate to source voltage

VGSS

±30

V

Drain current

ID

1.5

A

Drain peak current

ID(pulse)*

1

6

A

Body to drain diode reverse drain current

IDR

1.5

A

Channel dissipation

Pch*

2

20

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 μs, duty cycle ≤ 1%

2. Value at TC = 25°C

R07DS0397EJ0300

(Previous: REJ03G0907-0200)

Rev.3.00

May 16, 2011

Nº de peça semelhante - 2SK1152L-E

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Renesas Technology Corp	2SK1152L-E	89Kb / 8P	Silicon N Channel MOS FET

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Descrição semelhante - 2SK1152L-E

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Renesas Technology Corp	HAT2088R	110Kb / 9P	Silicon N Channel MOS FET Silicon N Channel MOS FET
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Panasonic Semiconductor	2SK1228	35Kb / 2P	Silicon N-Channel MOS FET
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2SK1152L-E Folha de dados(PDF) 1 Page - Renesas Technology Corp

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