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STF12A60 Folha de dados(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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STF12A60 Folha de dados(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
1 / 5 page Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. STF12A60 B B B Biiii----D D D Dir ir ir ire e e ect ct ct ctiiiio o o on n n nal al al al Tri Tri Tri Trio o o od d d de e e e T T T Th h h hy y y yri ri ri rist st st sto o o orrrr F F F Fea ea ea eattttu u u urrrres es es es ■ Repetitive Peak off-State Voltage:600 ■R.M.S On-State Current(IT(RMS)=12A ■ Isolation Voltage ( VISO = 1500V AC ) ■ High Commutation dV/dt. G G G Ge e e en n n ne e e errrral al al al D D D Desc esc esc escri ri ri rip p p pti ti ti tio o o on n n n General purpose switching and phase control applications. These devices are intended to be interfaced directly to micro- controllers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. A A A A1 1 1 1 A A A A2 2 2 2 G G G G A A A Ab b b bs s s so o o ollllu u u utttte e e e M M M Ma a a ax x x xim im im imu u u um m m m R R R Ra a a attttin in in ing g g gs s s s (TJ=25℃ unless otherwise specified) T T T TO O O O220F 220F 220F 220F S S S Sy y y ym m m mbol bol bol bol P P P Pa a a arrrrame ame ame ametttte e e errrr V V V Va a a allllue ue ue ue Units Units Units Units VDRM Peak Repetitive Forward Blocking Voltage(gate open) (Note 1) 600 V IT(RMS) Forward Current RMS (All Conduction Angles, Tc=58℃) 12 A ITSM Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 50/60 Hz) 119/130 A I2t Circuit Fusing Considerations (t p= 10 ms) 71 A2s PGM Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us) 5 W PG(AV) Average Gate Power — Forward, (Over any 20ms period) 0.5 W IFGM Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS) 2 A VRGM Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS) 10 V TJ, Junction Temperature -40~125 ℃ Tstg Storage Temperature -40~150 ℃ Not Not Not Note1 e1 e1 e1:::: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may switch to the on-state. The rate of rise of current should not exceed 3A/us. T T T Th h h he e e erm rm rm rmal al al al Ch Ch Ch Cha a a arrrrac ac ac actttte e e eri ri ri ris s s sttttiiiics cs cs cs S S S Sy y y ym m m mbol bol bol bol P P P Pa a a arrrrame ame ame ametttte e e errrr V V V Va a a allllue ue ue ue Units Units Units Units M M M Miiiin n n n Ty Ty Ty Typ p p p Ma Ma Ma Max x x x RQJC Thermal Resistance, Junction-to-Case - - 3.3 ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 120 ℃/W Rev. B Nov.2008 By using an internal ceramic pad, the TO220F series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (file ref.:E347423) |
Nº de peça semelhante - STF12A60 |
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Descrição semelhante - STF12A60 |
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