N0400P_12 datasheet(1/9 Pages) RENESAS

Nome de Peças	N0400P

Descrição Electrónicos	N0400P

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R07DS0500EJ0200 Rev.2.00

Page 1 of 7

Aug 19, 2011

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Preliminary Data Sheet

N0400P

MOS FIELD EFFECT TRANSISTOR

Description

The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications.

Features

• 2.5 V drive available

• Super low on-state resistance

RDS(on)1 = 40 m

Ω MAX. (VGS = −4.5 V, ID = −7.5 A)

RDS(on)2 = 73 m

Ω MAX. (VGS = −2.5 V, ID = −3.8 A)

• Built-in gate protection diode

Ordering Information

PART NUMBER

LEAD PLATING

PACKING

PACKAGE

N0400P-ZK-E1-AY

Note

N0400P-ZK-E2-AY

Note

Pure Sn (Tin)

Tape 2500 p/reel

TO-252 (MP-3ZK)

Note Pb-free (This product does not contain Pb in external electrode.)

Absolute Maximum Ratings (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

−40

V

Gate to Source Voltage (VDS = 0 V)

VGSS

m12

V

Drain Current (DC) (TC = 25

°C)

ID(DC)

m15

A

Drain Current (pulse)

Note1

ID(pulse)

m45

A

Total Power Dissipation (TC = 25

°C)

PT1

25

W

Total Power Dissipation (TA = 25

°C)

PT2

1.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Single Avalanche Current

Note2

IAS

−16

A

Single Avalanche Energy

Note2

EAS

25

mJ

Notes 1. PW

≤ 10

μs, Duty Cycle ≤ 1%

2. Starting Tch = 25

°C, VDD = −20 V, RG = 25 Ω, VGS = −12 → 0 V

Thermal Resistance

Channel to Case Thermal Resistance

Rth(ch-C)

5.0

°C/W

Channel to Ambient Thermal Resistance

Rth(ch-A)

125

°C/W

R07DS0500EJ0200

Rev.2.00

Aug 19, 2011

Nº de peça semelhante - N0400P_12

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Renesas Technology Corp	N0400P	232Kb / 9P	MOS FIELD EFFECT TRANSISTOR

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