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3N40L-TN3-R Folha de dados(PDF) 3 Page - Unisonic Technologies |
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3N40L-TN3-R Folha de dados(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 3N40 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-553.c ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 400 V Breakdown Voltage Temperature Coefficient BV △ DSS/T △ J Reference to 25°C, ID=250µA 0.38 V/°C Drain-Source Leakage Current IDSS VDS=400V, VGS=0V 10 µA Forward VGS=+30V, VDS=0V +100 nA Gate- Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.5A 1.6 2.0 Ω DYNAMIC PARAMETERS Input Capacitance CISS 350 460 pF Output Capacitance COSS 60 80 pF Reverse Transfer Capacitance CRSS VGS=0V, VDS=25V, f=1.0MHz 7 9 pF SWITCHING PARAMETERS Total Gate Charge QG 10 13 nC Gate to Source Charge QGS 3.0 nC Gate to Drain Charge QGD VGS=10V, VDS=320V, ID=3A (Note 1, 2) 4.5 nC Turn-ON Delay Time tD(ON) 12 30 ns Rise Time tR 60 130 ns Turn-OFF Delay Time tD(OFF) 20 50 ns Fall-Time tF VDD=200V, ID=3A, RG=25Ω (Note 1, 2) 30 70 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 3.0 A Maximum Body-Diode Pulsed Current ISM 12 A Drain-Source Diode Forward Voltage VSD IS=3A, VGS=0V 1.5 V Body Diode Reverse Recovery Time trr 190 ns Body Diode Reverse Recovery Charge QRR IS=3A, VGS=0V, dIF/dt=100A/µs (Note 1) 1.0 µC Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
Nº de peça semelhante - 3N40L-TN3-R |
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Descrição semelhante - 3N40L-TN3-R |
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