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6T08A-BW Folha de dados(PDF) 4 Page - Nell Semiconductor Co., Ltd |
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6T08A-BW Folha de dados(HTML) 4 Page - Nell Semiconductor Co., Ltd |
4 / 6 page www.nellsemi.com Page 4 of 6 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8 P(W) I (A) T(RMS) 0 25 50 75 100 125 0 1 2 3 4 5 6 7 I (A) T(RMS) T (°C) C 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 1E-2 1E-1 1E+0 K=[Z /R ] th th Zth(j-a) Zth(j-c) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 I (A) TM V (V) TM T max. V = 0.85V R = 60 m j t0 Ω d T = j T max. j t (s) p SEMICONDUCTOR 6T Series RoHS RoHS Fig.1 Maximum power dissipation versus RMS on-state current (full cycle) Fig.2 RMS on-state current versus case temperature (full cycle) Fig.3 Relative variation of thermal impedance versus pulse duration. Fig.4 On-state characteristics (maximum values). ORDERING INFORMATION SCHEME Triac series Current Voltage 6 = 6A 06 = 600V 08 = 800V B = 50mA Standard BW = 50mA Snubberless C = 25mA Standard CW = 35mA Snubberless SW = 10mA Logic Level TW = 5mA Logic Level 6 T 06 A - BW Package type 10 = 1000V A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) AF= TO-220F(ISOWAT TO-220AB, insulated) F = TO-251 (I-PAK) G = TO-252 (D-PAK) I Sensitivity GT TO-220AB (Insulated) TO-251/TO-252 TO-220AB |
Nº de peça semelhante - 6T08A-BW |
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Descrição semelhante - 6T08A-BW |
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