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N-HFA08TB120 Folha de dados(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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N-HFA08TB120 Folha de dados(HTML) 2 Page - Nell Semiconductor Co., Ltd |
2 / 6 page THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature Tlead 0.063" from case (1.6 mm) for 10 s - - Thermal resistance, junction to case RthJC - - K/W Thermal resistance, junction to ambient RthJA Typical socket mount Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased Weight - - Mounting torque 6.0 (5.0) - 12 (10) kgf cm . . (lbf in) Marking device Case style TO-220AC HFA08TB120 ºC SEMICONDUCTOR RoHS RoHS Page 2 of 6 Nell High Power Products 1.7 40 0.25 - - 300 g - 6 oz. - 0.21 - - N-HFA08TB120 ºC unless otherwise specified) = 25 PARAMETER SYMBOL TEST CONDITIONS V - = 16 A IF - - µA - - 1200 2.3 10 0.31 - 135 pF 11 ELECTRICAL SPECIFICATIONS (TJ Cathode to anode breakdown voltage VBR = 100 µA IR Maximum forward voltage = 8.0 A IF = 8.0 A, T I = 125 ºC F J Maximum reverse leakage current IRM Junction capacitance 2.5 3.3 - - ºC unless otherwise specified) = 25 PARAMETER SYMBOL TEST CONDITIONS ns - - 63 105 DYNAMIC RECOVERY CHARACTERISTICS PERLEG (TJ Reverse recovery time IF = 1.0 A, dI /dt = -200 A/µs, V =30 V, T = 25°C F R J 30 - A - 6.1 4.5 - nC - 335 140 - Peak recovery current Reverse recovery charge trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 T = 125 ºC J T = 125 ºC J T = 125 ºC J T = 25 ºC J T = 25 ºC J T = 25 ºC J I = 8.0A F dI /dt = -200 A/µs F V = 200 V R - VFM CT V = 200V R T = 125°C, V = V rated J R R V = V rated R R I = 0.5A, I = 1.0A, I = 250mA (RG#1 CKT) F R RR 28 - 3.0 UNITS MAX. TYP. MIN. UNITS MAX. TYP. MIN. A/µs - 85 133 - T = 125 ºC J T = 25 ºC J - - nH 8.0 Series inductance LS 20 1000 - - Measured lead to lead 5 mm from package body 160 8 95 11 880 380 3.1 4.1 35 Peak rate of fall of recovery current during tb dl /dt2 (rec)M dl /dt1 (rec)M www.nellsemi.com |
Nº de peça semelhante - N-HFA08TB120 |
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Descrição semelhante - N-HFA08TB120 |
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