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MC10XS4200 Folha de dados(PDF) 9 Page - Freescale Semiconductor, Inc |
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MC10XS4200 Folha de dados(HTML) 9 Page - Freescale Semiconductor, Inc |
9 / 60 page Analog Integrated Circuit Device Data Freescale Semiconductor 9 10XS4200 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1) ON-Resistance, Drain-to-Source (IHS = 3.0 A, TJ = 25 °C) CSNS_ratio = 0 VPWR = 8.0 V VPWR = 28 V VPWR = 36 V RDS(ON)25_0 – – – – – – 10 10 10 m Ω ON-Resistance, Drain-to-Source (IHS = 1.0 A, TJ = 25 °C) CSNS_ratio = 1 VPWR = 8.0 V VPWR = 28 V VPWR = 36 V RDS(ON)25_1 – – – – – – 10 10 10 m Ω ON-Resistance, Drain-to-Source (IHS = 3.0 A,TJ = 150 °C) CSNS_ratio = 0 VPWR = 8.0 V VPWR = 28 V VPWR = 36 V RDS(ON)150_0 – – – – – – 18 18 18 m Ω ON-Resistance, Drain-to-Source (IHS = 1.0 A,TJ = 150 °C) CSNS_ratio = 1 VPWR = 8.0 V VPWR = 28 V VPWR = 36 V RDS(ON)150_1 – – – – – – 18 18 18 m Ω ON-Resistance, Drain-to-Source difference from one channel to the other in parallel mode (IHS = 1.0 A,TJ = 150 °C) CSNS_ratio = X ΔR DS(ON)150 -0.8 – +0.8 m Ω ON-Resistance, Source-Drain (IHS = -3.0 A, TJ = 150 °C, VPWR = -24 V) RSD(ON)150 – – 18 m Ω Max. detectable wiring length (2.5 mm²) for severe short-circuit detection (see Power Supply): High slew rate selected Medium slew rate selected: Low slew rate selected: LSHORT 20 50 100 85 160 280 140 300 600 cm Over-current Detection thresholds with CSNS_ratio bit = 0 (CSR0) OCH1_0 OCH2_0 OCM1_0 OCM2_0 OCL1_0 OCL2_0 OCL3_0 55 35 22 13 9.0 6.0 3.0 66 42 26 16 10.8 7.2 3.6 77 49 31 19.5 12.6 8.4 4.2 A Table 3. Static Electrical Characteristics (continued) Unless specified otherwise: 8.0 V ≤ V PWR ≤ 36 V, 3.0 V ≤ VDD ≤ 5.5 V, - 40 °C ≤ TA ≤ 125 °C, GND = 0 V. Typical values are average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise. parameter Symbol Min Typ Max Unit |
Nº de peça semelhante - MC10XS4200 |
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Descrição semelhante - MC10XS4200 |
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