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CSD16321Q5 Folha de dados(PDF) 3 Page - Texas Instruments

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Nome de Peças CSD16321Q5
Descrição Electrónicos  N-Channel NexFET??Power MOSFET
Download  12 Pages
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

CSD16321Q5 Folha de dados(HTML) 3 Page - Texas Instruments

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GATE
Source
DRAIN
M0137-02
GATE
Source
DRAIN
M0137-01
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1
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t – PulseDuration – s
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0.01
0.3
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DutyCycle=t /t
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TypicalR
=93 C/W(minCu)
T =P
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R
q
JA
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thJA
thJA
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´
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t
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CSD16321Q5
www.ti.com
SLPS220B – AUGUST 2009 – REVISED MAY 2010
Max RqJA = 115°C/W
Max RqJA = 48°C/W
when mounted on
when mounted on 1
minimum pad area of 2
inch2 of 2 oz. Cu.
oz. Cu.
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TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Figure 1. Transient Thermal Impedance
Copyright © 2009–2010, Texas Instruments Incorporated
Submit Documentation Feedback
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