CSD17309Q3

SLPS261A – MARCH 2010 – REVISED OCTOBER 2010

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

Drain to Source Voltage

30

V

Drain to Source Leakage Current

1

mA

Gate to Source Leakage Current

100

nA

Gate to Source Threshold Voltage

0.9

1.2

1.7

V

6.3

8.5

m

Ω

Drain to Source On Resistance

4.9

6.3

m

Ω

4.2

5.4

m

Ω

Transconductance

67

S

Dynamic Characteristics

Input Capacitance

1150

1440

pF

Output Capacitance

580

750

pF

f = 1MHz

Reverse Transfer Capacitance

43

56

pF

Series Gate Resistance

1.2

2.4

Ω

Gate Charge Total (4.5V)

7.5

10

nC

Gate Charge Gate to Drain

1.7

nC

Gate Charge Gate to Source

2.5

nC

Qg(th)

Gate Charge at Vth

1.3

nC

Output Charge

15

nC

Turn On Delay Time

6.1

ns

Rise Time

9.9

ns

Turn Off Delay Time

13.2

ns

Fall Time

3.6

ns

Diode Characteristics

Diode Forward Voltage

0.85

1

V

Reverse Recovery Charge

30

nC

di/dt = 300A/ms

Reverse Recovery Time

23

ns

THERMAL CHARACTERISTICS

PARAMETER

MIN

TYP

MAX

UNIT

2

°C/W

57

°C/W

(1)

(2)

2

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