KMD6D0DN40Q datasheet(3/5 Pages) KEC

Nome de Peças	KMD6D0DN40Q

Descrição Electrónicos	This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters.

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Fabricante Electrônico	KEC [KEC(Korea Electronics)]

Página de início	http://www.keccorp.com

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3 / 5 page

2012. 7. 26

3/5

KMD6D0DN40Q

Revision No : 0

Drain - Source Voltage VDS (V)

Source - Drain Forward Voltage VSDF (V)

0

2

8

16

4

12

20

468

10

Gate - Source Voltage VGS (V)

-80

-40

40

80

160

120

0

1

4

2

5

3

Junction Temperature Tj (

)

C

V

GS=4.0

V

GS=4.5

V

GS=10

V

GS=3.5

V

GS=3.0

V

GS=5

Common Source

Tc= 25

Pulse Test

C

Common Source

V

GS=VDS

I

D=250µA

Pulse Test

Fig1. ID - VDS

Fig3. ID - VGS

Fig5. Vth - Tj

Fig6. IDR - VSDF

234

10

56789

25 C

10

1

10

2

10

0

Common Source

V

DS=10V

Pulse Test

100 C

0.4

0.6

0.8

2.0

1.0

1.2

1.4

1.6

1.8

25 C

10

1

10

2

10

0

100 C

0

0.16

0.12

0.14

0.06

0.08

0.02

0.04

0.1

10

15

05

20

Drain Current ID (A)

VGS=

4.5

V

GS=10V

Common Source

Tc= 25

Pulse Test

C

Fig2. RDS(on) - ID

0

40

100

80

20

60

0

160

120

80

-40

40

-80

Common Source

V

DS=10V

Pulse Test

Common Drain

V

GS=0V

Pulse Test

Junction Temperature Tj (

)

C

Fig4. RDS(on) - Tj

Nº de peça semelhante - KMD6D0DN40Q

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
KEC(Korea Electronics)	KMD6D0DN40Q	378Kb / 5P	Dual N-Ch Trench MOSFET

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Descrição semelhante - KMD6D0DN40Q

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KMD6D0DN40Q Folha de dados(PDF) 3 Page - KEC(Korea Electronics)

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Nº de peça semelhante - KMD6D0DN40Q

Descrição semelhante - KMD6D0DN40Q

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