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TPIC5203D Folha de dados(PDF) 1 Page - Texas Instruments |
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TPIC5203D Folha de dados(HTML) 1 Page - Texas Instruments |
1 / 13 page TPIC5203 2CHANNEL INDEPENDENT GATEPROTECTED POWER DMOS ARRAY SLIS040 − SEPTEMBER 1994 Copyright 1994, Texas Instruments Incorporated 2−1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 • Low r DS(on) . . . 0.26 Ω Typ • High Voltage Output ...60 V • Extended ESD Capability . . . 4000 V • Pulsed Current ...8 A Per Channel • Fast Commutation Speed description The TPIC5203 is a monolithic gate-protected power DMOS array that consists of two independent electrically isolated N-channel enhancement-mode DMOS transistors. Each transistor features integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body model of a 100-pF capacitor in series with a 1.5-k Ω resistor. The TPIC5203 is offered in a standard eight-pin small-outline surface-mount (D) package and is characterized for operation over the case temperature range of − 40 °C to 125°C. schematic D1 Z1 DRAIN1 GATE1 SOURCE1 Q1 7 8 D2 Z2 DRAIN2 GATE2 SOURCE2 Q2 3 4 2 GND 1 6 ZC1b ZC1a ZC2b ZC2a NOTE: For correct operation, no terminal pin may be taken below GND. 1 2 3 4 8 7 6 5 GND SOURCE1 GATE2 DRAIN2 DRAIN1 GATE1 SOURCE2 NC D PACKAGE (TOP VIEW) NC − No internal connection PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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Descrição semelhante - TPIC5203D |
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