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TPS1110DR Folha de dados(PDF) 2 Page - Texas Instruments |
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TPS1110DR Folha de dados(HTML) 2 Page - Texas Instruments |
2 / 10 page TPS1110, TPS1110Y SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS SLVS100B – OCTOBER 1994 – REVISED JANUARY 1998 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TPS1110Y chip information This chip, when properly assembled, displays characteristics similar to the TPS1110C. Thermal compression or ultrasonic bonding may be used on the doped aluminum bonding pads. The chip may be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C TOLERANCES ARE ±10% ALL DIMENSIONS ARE IN MILS TPS1110Y (2) (6) (1) (3) (7) (8) (5) (4) DRAIN SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN 57 64 (2) (1) (3) (4) (6) (7) (8) (5) |
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Descrição semelhante - TPS1110DR |
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