ST7400 datasheet(6/8 Pages) STANSON | ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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ST7400 Folha de dados(PDF) 6 Page - Stanson Technology

Nome de Peças	ST7400

Descrição Electrónicos	ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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Fabricante Electrônico	STANSON [Stanson Technology]

Página de início	http://www.stansontech.com

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ST7400

N Channel Enhancement Mode MOSFET

2.8A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

ST7400 2005. V1

YPICAL CHARACTERICTICS

Nº de peça semelhante - ST7400

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Stanson Technology	ST7407	233Kb / 7P	P Channel Enhancement Mode MOSFET
Stanson Technology	ST7407S32RG	233Kb / 7P	P Channel Enhancement Mode MOSFET

Descrição semelhante - ST7400

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Stanson Technology	STN4346	352Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4426	362Kb / 6P	STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST3406SRG	325Kb / 6P	ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4416	966Kb / 6P	STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4392	383Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4480	742Kb / 6P	STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4850	532Kb / 6P	STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN1810	966Kb / 7P	STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4438	269Kb / 6P	STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4546	363Kb / 6P	STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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