TC7W00F_09 datasheet(3/8 Pages) TOSHIBA

Nome de Peças	TC7W00F

Descrição Electrónicos	Dual 2-Input NAND Gate

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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TC7W00F/FU/FK

2009-08-04

3

Electrical Characteristics

DC Characteristics

Ta

= 25°C

Ta

= −40 to 85°C

Characteristics

Symbol

Test Condition

VCC (V)

Min

Typ.

Max

Min

Max

Unit

2.0

1.5

⎯

1.5

⎯

4.5

3.15

⎯

3.15

⎯

High-level input voltage

VIH

⎯

6.0

4.2

⎯

4.2

⎯

2.0

⎯

0.5

⎯

0.5

4.5

⎯

1.35

⎯

1.35

Low-level input voltage

VIL

⎯

6.0

⎯

1.8

⎯

1.8

V

2.0

1.9

2.0

⎯

1.9

⎯

4.5

4.4

4.5

⎯

4.4

⎯

IOH = −20 μA

6.0

5.9

6.0

⎯

5.9

⎯

IOH = −4 mA

4.5

4.18

4.31

⎯

4.13

⎯

High-level output voltage

VOH

VIN = VIH

or VIL

IOH = −5.2 mA

6.0

5.68

5.80

⎯

5.63

⎯

2.0

⎯

0.0

0.1

⎯

0.1

4.5

⎯

0.0

0.1

⎯

0.1

IOL = 20 μA

6.0

⎯

0.0

0.1

⎯

0.1

IOL = 4 mA

4.5

⎯

0.17

0.26

⎯

0.33

Low-level output voltage

VOL

VIN = VIH

IOL = 5.2 mA

6.0

⎯

0.18

0.26

⎯

0.33

V

Input leakage current

IIN

VIN = VCC or GND

6.0

⎯

±0.1

⎯

±1.0

μA

Quiescent supply current

ICC

VIN = VCC or GND

6.0

⎯

1.0

⎯

10.0

μA

Nº de peça semelhante - TC7W00F_09

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	TC7W00F	236Kb / 8P	DUAL 2-INPUT NAND GATE

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Descrição semelhante - TC7W00F_09

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