2SC6142 datasheet(2/5 Pages) TOSHIBA

Nome de Peças	2SC6142

Descrição Electrónicos	High Voltage Switching Applications

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

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2SC6142

2010-04-23

2

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cutoff current

ICBO

VCB = 800 V, IE = 0

⎯

50

μA

Emitter cutoff current

IEBO

VEB = 8 V, IC = 0

⎯

100

nA

Collector-base breakdown voltage

V (BR) CBO

IC = 1 mA, IE = 0

800

⎯

V

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

375

⎯

V

hFE (1)

VCE = 5 V, IC = 1 mA

80

⎯

hFE (2)

VCE = 5 V, IC = 0.1 A

100

⎯

200

DC current gain

hFE (3)

VCE = 5 V, IC = 0.2 A

80

⎯

Collector emitter saturation voltage

VCE (sat)

IC = 0.8 A, IB = 0.1 A

⎯

0.9

V

Base-emitter saturation voltage

VBE (sat)

IC = 0.8 A, IB = 0.1 A

⎯

1.3

V

Rise time

tr

⎯

0.2

⎯

Storage time

tstg

⎯

3.5

⎯

Switching time

Fall time

tf

IB1 = 20 mA, IB2 = 50 mA

Duty cycle ≤ 1%

⎯

0.15

⎯

μs

Marking

Note 3: A line under a Lot No. identifies the indication of product Labels.

[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the

restriction of the use of certain hazardous substances in electrical and electronic equipment.

Note 3

Part No. (or abbreviation code)

Lot No.

20 μs

VCC ≈ 200 V

Input

Output

IB2

IB1

I

IC

0

C6142

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