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1SS417CT Folha de dados(PDF) 1 Page - Toshiba Semiconductor |
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1SS417CT Folha de dados(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 1SS417CT 2009-01-08 1 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application • Small package • Low forward voltage: VF (3) = 0.56 V (typ.) • Low reverse current: IR = 5 μA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1 A Power dissipation P * 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C * Mounted on a glass epoxy circuit board of 20 mm× 20 mm, pad dimension of 4 mm× 4 mm. Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit VF (1) ― IF = 1 mA ― 0.28 ― VF (2) ― IF = 10 mA ― 0.36 ― Forward voltage VF (3) ― IF = 100 mA ― 0.56 0.62 V Reverse current IR ― VR = 40 V ― ― 5 μA Total capacitance CT ― VR = 0 V, f = 1 MHz ― 15 ― pF Marking Equivalent Circuit (Top View) JEDEC ― JEITA ― TOSHIBA 1-1P1A Weight: 0.7 mg (typ.) Unit: mm CST2 X 0.38 +0.02 -0.03 0.6±0.05 0.5±0.03 0.05±0.03 |
Nº de peça semelhante - 1SS417CT |
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Descrição semelhante - 1SS417CT |
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