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STK672-400C-E Folha de dados(PDF) 2 Page - Sanyo Semicon Device |
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STK672-400C-E Folha de dados(HTML) 2 Page - Sanyo Semicon Device |
2 / 19 page STK672-400C-E No.A2136-2/19 Specifications Absolute Maximum Ratings at Tc = 25 °C Parameter Symbol Conditions Ratings unit Maximum supply voltage 1 VCC max No signal 52 V Maximum supply voltage 2 VDD max No signal -0.3 to +7.0 V Input voltage VIN max Logic input pins -0.3 to +5.8 V Output current IOH max VDD=5V, CLOCK≥200Hz 2.2 A Allowable power dissipation Pd max With an arbitrarily large heat sink. Per MOSFET 7 W Operating substrate temperature Tc max 105 °C Junction temperature Tj max 150 °C Storage temperature Tstg -40 to +125 °C Allowable Operating Ranges at Ta=25 °C Parameter Symbol Conditions Ratings unit Operating supply voltage 1 VCC With signals applied 10 to 45 V Operating supply voltage 2 VDD With signals applied 5 ±5% V Input high voltage VIH 0 to 5.8 V Output current IOH Tc=105 °C, CLOCK≥200Hz 2 A Phase driver withstand voltage VDSS TR1, 2, 3, 4 ID=1mA (Tc=25°C) 100min V Electrical Characteristics at Tc=25 °C, VCC=24V, VDD=5.0V Parameter Symbol Conditions min typ max unit VDD supply current ICCO VDD=5.0V, ENABLE=Low Vref=2V 6 10 15 mA Output average current Ioave R/L=3 Ω/3.8mH in each phase 0.51 0.59 0.66 A FET diode forward voltage Vdf If=1A 1.2 1.6 V Output saturation voltage Vsat RL=23Ω 0.5 0.7 V VIH Except for the Vref pin 2.5 V Input voltage VIL Except for the Vref pin 0.6 V Control input pin Input current Iil Except for the Vref pin 10 μA Input voltage VI Pin 19 2 VDD V Vref pin Input current Ios Pin 19, VDD input 12.5 μA PWM frequency fc 37.5 50 62.5 kHz Current Distribution Ratio 2W1-2 W1-2 1-2 θ=7/8 100 2W1-2 W1-2 θ=6/8 93 2W1-2 θ=5/8 84 2W1-2 W1-2 1-2 θ=4/8 71 2W1-2 θ=3/8 55 2W1-2 W1-2 θ=2/8 40 2W1-2 θ=1/8 19 2 Vref *1 100 % Notes: A fixed-voltage power supply must be used. The value of Item 1 is the design target and not measured. |
Nº de peça semelhante - STK672-400C-E |
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Descrição semelhante - STK672-400C-E |
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