FDD7N60NZ / FDU7N60NZ Rev. A

www.fairchildsemi.com

2

Package Marking and Ordering Information

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDD7N60NZ

FDD7N60NZ

D-PAK

380mm

16mm

2500

FDU7N60NZ

FDU7N60NZ

I-PAK

-

-

70

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain to Source Breakdown Voltage

600

-

-

V

BV

DSS

T

J

Breakdown Voltage Temperature

Coefficient

0.6

-

Zero Gate Voltage Drain Current

-

-

50

A

-

-

100

Gate to Body Leakage Current

-

-



±10

A

Gate Threshold Voltage

-

5.0

V

Static Drain to Source On Resistance

-



1.05

1.25



Forward Transconductance

(Note 4)

-7.3

-

S

Input Capacitance

f = 1MHz

-

550

730

pF

Output Capacitance

-

70

90

pF

Reverse Transfer Capacitance

-

7

10

pF

Total Gate Charge at 10V

(Note 4, 5)

-13

17

nC

Gate to Source Gate Charge

-

3

-

nC

Gate to Drain “Miller” Charge

-

5.6

-

nC

Turn-On Delay Time

(Note 4, 5)

-17.5

45

ns

Turn-On Rise Time

-

30

70

ns

Turn-Off Delay Time

-

40

90

ns

Turn-Off Fall Time

-

25

60

ns

Maximum Continuous Drain to Source Diode Forward Current

-

-

5.5

A

Maximum Pulsed Drain to Source Diode Forward Current

-

-

22

A

Drain to Source Diode Forward Voltage

-

-

1.4

V

Reverse Recovery Time

(Note 4)

-

250

-

ns

Reverse Recovery Charge

-

1.4

-

C

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

4. Pulse Test: Pulse width

 300s, Dual Cycle  2%

5. Essentially Independent of Operating Temperature Typical Characteristics