Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

FDS86140 Folha de dados(PDF) 2 Page - Fairchild Semiconductor

Nome de Peças FDS86140
Descrição Electrónicos  N-Channel PowerTrench짰 MOSFET 100 V, 11.2 A, 9.8 m廓
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS86140 Folha de dados(HTML) 2 Page - Fairchild Semiconductor

  FDS86140 Datasheet HTML 1Page - Fairchild Semiconductor FDS86140 Datasheet HTML 2Page - Fairchild Semiconductor FDS86140 Datasheet HTML 3Page - Fairchild Semiconductor FDS86140 Datasheet HTML 4Page - Fairchild Semiconductor FDS86140 Datasheet HTML 5Page - Fairchild Semiconductor FDS86140 Datasheet HTML 6Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
www.fairchildsemi.com
2
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
Electrical Characteristics T
J = 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
100
V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
70
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA2
2.7
4
V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-11
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 11.2 A
8.1
9.8
m
Ω
VGS = 6 V, ID = 9 A
10.8
16
VGS = 10 V, ID = 11.2 A,
TJ = 125 °C
13.1
17
gFS
Forward Transconductance
VDS = 10 V, ID = 11.2 A35
S
Ciss
Input Capacitance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
1940
2580
pF
Coss
Output Capacitance
440
585
pF
Crss
Reverse Transfer Capacitance
20
30
pF
Rg
Gate Resistance
0.9
Ω
td(on)
Turn-On Delay Time
VDD = 50 V, ID = 11.2 A,
VGS = 10 V, RGEN = 6 Ω
13.7
25
ns
tr
Rise Time
5.6
11
ns
td(off)
Turn-Off Delay Time
23
38
ns
tf
Fall Time
4.8
10
ns
Qg
Total Gate Charge
VGS = 0 V to 10 V
VDD = 50 V,
ID = 11.2 A
29
41
nC
Qg
Total Gate Charge
VGS = 0 V to 5 V16.5
23
nC
Qgs
Gate to Source Charge
8.0
nC
Qgd
Gate to Drain “Miller” Charge
6.5
nC
VSD
Source-Drain Diode Forward Voltage
VGS = 0 V, IS = 11.2 A
(Note 2)
0.8
1.3
V
VGS = 0 V, IS = 2 A
(Note 2)
0.7
1.2
trr
Reverse Recovery Time
IF = 11.2 A, di/dt = 100 A/μs
53
85
ns
Qrr
Reverse Recovery Charge
59
94
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in
2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300
μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 23 A, VDD = 90 V, VGS = 10 V.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.


Nº de peça semelhante - FDS86140

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Fairchild Semiconductor
FDS86141 FAIRCHILD-FDS86141 Datasheet
239Kb / 7P
   N-Channel PowerTrench짰 MOSFET 100 V, 7 A, 23 m?
More results

Descrição semelhante - FDS86140

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Fairchild Semiconductor
FDT1600N10ALZ FAIRCHILD-FDT1600N10ALZ Datasheet
291Kb / 9P
   N-Channel PowerTrench짰 MOSFET 100 V, 5.6 A, 160 m廓
FDD86102LZ FAIRCHILD-FDD86102LZ_12 Datasheet
372Kb / 6P
   N-Channel PowerTrench짰 MOSFET 100 V, 35 A, 22.5 m廓
FDD86110 FAIRCHILD-FDD86110 Datasheet
257Kb / 6P
   N-Channel PowerTrench짰 MOSFET 100 V, 50 A, 10.2 m廓
logo
ON Semiconductor
FDP085N10A ONSEMI-FDP085N10A Datasheet
3Mb / 10P
   N-Channel PowerTrench짰 MOSFET 100 V, 96 A, 8.5 m廓
November-2017, Rev. 3
logo
Diodes Incorporated
FDD86102LZ DIODES-FDD86102LZ Datasheet
372Kb / 6P
   N-Channel PowerTrench짰 MOSFET 100 V, 35 A, 22.5 m廓
logo
Fairchild Semiconductor
FDMS86150 FAIRCHILD-FDMS86150 Datasheet
324Kb / 7P
   N-Channel PowerTrench짰 MOSFET 100 V, 60 A, 4.85 m廓
FDMS7650 FAIRCHILD-FDMS7650_12 Datasheet
248Kb / 7P
   N-Channel PowerTrench짰 MOSFET 30 V, 100 A, 0.99 m廓
FDPF3860TYDTU FAIRCHILD-FDPF3860TYDTU Datasheet
589Kb / 8P
   N-Channel PowerTrench짰 MOSFET 100 V, 20 A, 38.2 m廓
FDMS7620S FAIRCHILD-FDMS7620S Datasheet
364Kb / 12P
   Dual N-Channel PowerTrench짰 MOSFET Q1: 30 V, 10.1 A, 20.0 m廓 Q2: 30 V, 12.4 A, 11.2 m廓
FDMS86103L FAIRCHILD-FDMS86103L Datasheet
279Kb / 7P
   N-Channel PowerTrench짰 MOSFET 100 V, 49 A, 8 m廓
More results


Html Pages

1 2 3 4 5 6


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com