FMBS2383 datasheet(2/5 Pages) FAIRCHILD

Nome de Peças	FMBS2383

Descrição Electrónicos	NPN Epitaxial Silicon Transistor

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Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

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FMBS2383 Rev. A0

2

Typical Performance Characteristics

Figure 1. DC Current Gain

Figure 2. Collector-Emitter Saturation Voltage

Figure 3. Base-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

Figure 5. Collector-Base Cutoff Current

Figure 6. Emitter-Base Cutoff Current

1

10

100

1000

10

100

1000

T

A

= 100

oC

V

CE

= 5V

I

C

[mA], COLLECTOR CURRENT

T

A

= 125

oC

T

A

= 75

oC

T

a

= 25

oC

1

10

100

1000

0.01

0.1

1

I

C

[mA], COLLECTOR CURRENT

I

C

= 10 I

B

T

A

= 125

oC

T

A

= 75

oC

T

A

= 25

oC

T

A

= 100

oC

1

10

100

1000

0.1

1

10

I

C

= 10 I

B

I

C

[mA], COLLECTOR CURRENT

T

A

= 125

oC

T

A

= 75

oC

T

A

= 25

oC

T

A

= 100

oC

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0

100

200

300

400

500

V

CE

= 5V

V

BE

(on) [V], BASE-EMITTER ON VOLTAGE

T

A

= 125

oC

T

A

= 75

oC

T

A

= 25

oC

T

A

= 100

oC

10

100

0.01

0.1

1

10

100

V

CB

[V], Collector-Base Voltage

T

A

= 125

oC

T

A

= 75

oC

T

A

= 25

oC

T

A

= 100

oC

12

3

4

5

6

7

8

9 10

1E-3

0.01

0.1

1

10

100

V

EB

[V], Emitter-Base Voltage

T

A

= 125

oC

T

A

= 75

oC

T

A

= 25

oC

T

A

= 100

oC

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ON Semiconductor	FMBS2383	319Kb / 7P	NPN Epitaxial Silicon Transistor April 2011 Rev. A0

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